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HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I
Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit) 32k EEPROM (4-kword x 8-bit)/64k EEPROM (8-kword x 8-bit)
REJ03C0131-0500 Rev. 5.00 Jan.14.2005
Description
HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM are authorized for using consumer applications such as cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology's sales office before using industrial applications such as automotive systems, embedded controllers, and meters.
Features
* * * * Single supply: 1.8 V to 5.5 V Two-wire serial interface (I2CTM serial bus*1) Clock frequency: 400 kHz Power dissipation: Standby: 3 A (max) Active (Read): 1 mA (max) Active (Write): 3 mA (max) Automatic page write: 32-byte/page Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V) Endurance: 105 Cycles (Page write mode) Data retention: 10 Years
* * * *
Rev.5.00, Jan.14.2005, page 1 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I * Small size packages: TSSOP-8pin , SOP-8pin * Shipping tape and reel TSSOP 8-pin: 3,000 IC/reel SOP 8-pin: 2,500 IC/reel * Temperature range: -40 to +85C * Lead free products. Note: 1. I2C is a trademark of Philips Corporation.
Ordering Information
Type No. HN58X2408FPIE HN58X2416FPIE HN58X2432FPIE HN58X2464FPIE HN58X2408TIE HN58X2416TIE HN58X2432TIE HN58X2464TIE Internal organization Operating voltage Frequency Package 8k bit (1024 x 8-bit) 16k bit (2048 x 8-bit) 32k bit (4096 x 8-bit) 64k bit (8192 x 8-bit) 8k bit (1024 x 8-bit) 16k bit (2048 x 8-bit) 32k bit (4096 x 8-bit) 64k bit (8192 x 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic TSSOP (TTP-8DAV) Lead free 1.8 V to 5.5 V 400 kHz 150 mil 8-pin plastic SOP (FP-8DBV) Lead free
Pin Arrangement
8-pin TSSOP 8-pin SOP
A0 A1 A2 VSS
1 2 3 4
8 7 6 5 (Top view)
VCC WP SCL SDA
Rev.5.00, Jan.14.2005, page 2 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Pin Description
Pin name A0 to A2 SCL SDA WP VCC VSS Function Device address Serial clock input Serial data input/output Write protect Power supply Ground
Block Diagram
VCC VSS
High voltage generator
Address generator
X decoder
Memory array
WP A0, A1, A2 SCL SDA
Control logic
Y decoder
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter Supply voltage relative to VSS Input voltage relative to VSS Operating temperature range*1 Storage temperature range Symbol VCC Vin Topr Tstg Value -0.6 to +7.0 -0.5*2 to +7.0*3 -40 to +85 -65 to +125 Unit V V C C
Notes: 1. Including electrical characteristics and data retention. 2. Vin (min): -3.0 V for pulse width 50 ns. 3. Should not exceed VCC + 1.0 V.
Rev.5.00, Jan.14.2005, page 3 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
DC Operating Conditions
Parameter Supply voltage Input high voltage Input low voltage Operating temperature Note: Symbol VCC VSS VIH VIL Topr Min 1.8 0 VCC x 0.7 -0.3*1 -40 Typ 0 Max 5.5 0 VCC + 1.0 VCC x 0.3 +85 Unit V V V V C
1. VIL (min): -1.0 V for pulse width 50 ns.
DC Characteristics (Ta = -40 to +85C, VCC = 1.8 V to 5.5 V)
Parameter Input leakage current Output leakage current Standby VCC current Read VCC current Write VCC current Output low voltage Symbol Min ILI ILO ISB ICC1 ICC2 VOL2 Typ 1.0 Max 2.0 2.0 3.0 1.0 3.0 0.4 Unit A A A mA mA V Test conditions VCC = 5.5 V, Vin = 0 to 5.5 V VCC = 5.5 V, Vout = 0 to 5.5 V Vin = VSS or VCC VCC = 5.5 V, Read at 400 kHz VCC = 5.5 V, Write at 400 kHz VCC = 4.5 to 5.5 V, IOL = 1.6 mA VCC = 2.7 to 4.5 V, IOL = 0.8 mA VCC = 1.8 to 2.7 V, IOL = 0.4 mA VCC = 1.8 to 2.7 V, IOL = 0.2 mA
VOL1
0.2
V
Capacitance (Ta = +25C, f = 1 MHz)
Parameter Symbol
1 1
Min
Typ
Max 6.0 6.0
Unit pF pF
Test conditions Vin = 0 V Vout = 0 V
Input capacitance (A0 to A2, SCL, WP) Cin* Output capacitance (SDA) Note:
CI/O*
1. This parameter is sampled and not 100% tested.
Rev.5.00, Jan.14.2005, page 4 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
AC Characteristics (Ta = -40 to +85C, VCC = 1.8 to 5.5 V)
Test Conditions * Input pules levels: VIL = 0.2 x VCC VIH = 0.8 x VCC * Input rise and fall time: 20 ns * Input and output timing reference levels: 0.5 x VCC * Output load: TTL Gate + 100 pF
Parameter Clock frequency Clock pulse width low Clock pulse width high Noise suppression time Access time Bus free time for next mode Start hold time Start setup time Data in hold time Data in setup time Input rise time Input fall time Stop setup time Data out hold time Write cycle time VCC = 2.7 V to 5.5 V VCC = 1.8 V to 2.7 V Symbol fSCL tLOW tHIGH tI tAA tBUF tHD.STA tSU.STA tHD.DAT tSU.DAT tR tF tSU.STO tDH tWC tWC Min 1200 600 100 1200 600 600 0 100 600 50 Typ Max 400 50 900 300 300 10 15 Unit kHz ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 2 2 1 1 1 Notes
Notes: 1. This parameter is sampled and not 100% tested. 2. tWC is the time from a stop condition to the end of internally controlled write cycle.
Rev.5.00, Jan.14.2005, page 5 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Timing Waveforms
Bus Timing
1/fSCL tLOW
tF SCL tSU.STA tHD.STA SDA (in) tAA SDA (out)
tHIGH
tR
tHD.DAT
tSU.DAT
tSU.STO
tBUF tDH
Write Cycle Timing
Stop condition Start condition
SCL SDA D0 in Write data (Address (n)) ACK
tWC (Internally controlled)
Rev.5.00, Jan.14.2005, page 6 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Pin Function
Serial Clock (SCL) The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is 400 kHz. Serial Input/Output Data (SDA) The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that pin is open-drain driven structure. Use proper resistor value for your system by considering VOL, IOL and the SDA pin capacitance. Except for a start condition and a stop condition which will be discussed later, the SDA transition needs to be completed during the SCL low period. Data Validity (SDA data change timing waveform)
SCL
SDA Data change Data change
Note:
High-to-low and low-to-high change of SDA should be done during the SCL low period.
Rev.5.00, Jan.14.2005, page 7 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Device Address (A0, A1, A2) Eight devices can be wired for one common data bus line as maximum. Device address pins are used to distinguish each device and device address pins should be connected to VCC or VSS. When device address code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one device can be activated. As for 8k to 16k EEPROM, whole or some device address pins don't need to be fixed since device address code provided from the SDA pin is used as memory address signal. Pin Connections for A0 to A2
Pin connection Max connect Memory size number 8k bit 16k bit 32k bit 64k bit 2 1 8 8 A2
1
A1
2
A0 x x
Notes Use A0, A1 for memory address a8 and a9 Use A0, A1, A2 for memory address a8, a9 and a10
VCC/VSS* x* x
x
VCC/VSS VCC/VSS VCC/VSS VCC/VSS VCC/VSS VCC/VSS
Notes: 1. "VCC/VSS" means that device address pin should be connected to VCC or VSS. 2. x = Don't care (Open is also approval.)
Write Protect (WP) When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in the following table. When the WP is low, write operation for all memory arrays are allowed. The read operation is always activated irrespective of the WP pin status. WP should be fixed high or low during operations since WP does not provide a latch function. Write Protect Area
Write protect area WP pin status VIH VIL 8k bit Upper 1/2 (4k bit) 16k bit Upper 1/2 (8k bit) 32k bit Upper 1/4 (8k bit) 64k bit Upper 1/4 (16k bit)
Normal read/write operation
Rev.5.00, Jan.14.2005, page 8 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Functional Description
Start Condition A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation (See start condition and stop condition). Stop Condition A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the write data inputs and place the device in a internally-timed write cycle to the memories. After the internally-timed write cycle which is specified as tWC, the device enters a standby mode (See write cycle timing). Start Condition and Stop Condition
SCL SDA (in) Start condition Stop condition
Rev.5.00, Jan.14.2005, page 9 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Acknowledge All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a zero to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation, EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM sends a zero to acknowledge after receiving the device address word. After sending read data, the EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge, it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment) and a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending read data. Acknowledge Timing Waveform
SCL SDA IN
1
2
8
9
Acknowledge out
SDA OUT
Rev.5.00, Jan.14.2005, page 10 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Device Addressing The EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to distinguish device type and this EEPROM uses "1010" fixed code. The device address word is followed by the 3-bit device address code in the order of A2, A1, A0. The device address code selects one device out of all devices which are connected to the bus. This means that the device is selected if the inputted 3bit device address code is equal to the corresponding hard-wired A2-A0 pin status. As for the 8kbit and 16kbit EEPROMs, whole or some bits of their device address code may be used as the memory address bits. For example, A0 and A1 are used as a8 and a9 for the 8kbit. The 16kbit doesn't use the device address code instead all 3 bits are used as the memory address bits a8, a9 and a10. The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is low and a read operation is initiated if this bit is high. Upon a compare of the device address word, the EEPROM enters the read or write operation after outputting the zero as an acknowledge. The EEPROM turns to a stand-by state if the device code is not "1010" or device address code doesn't coincide with status of the correspond hard-wired device address pins A0 to A2. Device Address Word
Device address word (8-bit) Device code (fixed) 32k, 64k 8k 16k 1 1 1 0 0 0 1 1 1 0 0 0 Device address code*1 A2 A2 a10 A1 a9 a9 A0 a8 a8 R/W code*2 R/W R/W R/W
Notes: 1. A2 to A0 are device address and a10 to a8 are memory address. 2. R/W="1" is read and R/W = "0" is write.
Rev.5.00, Jan.14.2005, page 11 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Write Operations Byte Write: A write operation requires an 8-bit device address word with R/W = "0". Then the EEPROM sends acknowledgment "0" at the ninth clock cycle. After these, the 8kbit to 16kbit EEPROMs receive 8-bit memory address word, on the other hand the 32kbit and 64kbit EEPROMs receive 2 sequence 8-bit memory address words. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0" and receives a following 8-bit write data. After receipt of write data, the EEPROM outputs acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM returns to a standby mode after completion of the write cycle. Byte Write Operation
Device address 8k to 16k Start Device address 32k to 64k Start 1010
W
Memory address (n)
W
Write data (n)
D7 D6 D5 D4 D3 D2 D1 D0
1010
ACK R/W 1st Memory address (n)
*1 *1 *1 a12 *2 a11 a10 a9 a8
a7 a6 a5 a4 a3 a2 a1 a0
ACK
ACK
Stop
2nd Memory address (n)
a7 a6 a5 a4 a3 a2 a1 a0
Write data (n)
D7 D6 D5 D4 D3 D2 D1 D0
ACK R/W
ACK
ACK
Stop
Notes: 1. Don`t care bits for 32k and 64k. 2. Don`t care bit for 32k.
Rev.5.00, Jan.14.2005, page 12 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Page Write: The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to be written in a single write cycle. The page write is the same sequence as the byte write except for inputting the more write data. The page write is initiated by a start condition, device address word, memory address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the page write operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition. The a0 to a4 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the last address of the page, the a0 to a4 address bits will roll over to the first address of the same page and previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters internally-timed write cycle. Page Write Operation
Device address 8k to 16k Start Device address 32k to 64k Start 1010
W
Memory address (n)
W
Write data (n)
D7 D6 D5 D4 D3 D2 D1 D0
Write data (n+m)
D5 D4 D3 D2 D1 D0
1010
a7 a6 a5 a4 a3 a2 a1 a0
ACK R/W 1st Memory address (n)
*1 *1 *1 a12 *2 a11 a10 a9 a8
ACK
ACK
Stop ACK Write data (n)
D7 D6 D5 D4 D3 D2 D1 D0
2nd Memory address (n)
a7 a6 a5 a4 a3 a2 a1 a0
Write data (n+m)
D5 D4 D3 D2 D1 D0
ACK R/W
ACK
ACK
ACK
ACK Stop
Notes: 1. Don`t care bits for 32k and 64k. 2. Don`t care bit for 32k.
Rev.5.00, Jan.14.2005, page 13 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Acknowledge Polling: Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not. This feature is initiated by the stop condition after inputting write data. This requires the 8-bit device address word following the start condition during a internally-timed write cycle. Acknowledge polling will operate when the R/W code = "0". Acknowledgment "1" (no acknowledgment) shows the EEPROM is in a internally-timed write cycle and acknowledgment "0" shows that the internally-timed write cycle has completed. See Write Cycle Polling using ACK. Write Cycle Polling Using ACK
Send write command
Send stop condition to initiate write cycle
Send start condition Send device address word with R/W = 0
ACK returned Yes Next operation is addressing the memory Yes Send memory address
No
No
Send start condition
Send stop condition
Proceed write operation
Proceed random address read operation
Send stop condition
Rev.5.00, Jan.14.2005, page 14 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Read Operation There are three read operations: current address read, random read, and sequential read. Read operations are initiated the same way as write operations with the exception of R/W = "1". Current Address Read: The internal address counter maintains the last address accessed during the last read or write operation, with incremented by one. Current address read accesses the address kept by the internal address counter. After receiving a start condition and the device address word(R/W is "1"), the EEPROM outputs the 8-bit current address data from the most significant bit following acknowledgment "0". If the EEPROM receives acknowledgment "1" (no acknowledgment) and a following stop condition, the EEPROM stops the read operation and is turned to a standby state. In case the EEPROM has accessed the last address of the last page at previous read operation, the current address will roll over and returns to zero address. In case the EEPROM has accessed the last address of the page at previous write operation, the current address will roll over within page addressing and returns to the first address in the same page. The current address is valid while power is on. The current address after power on will be indefinite. The random read operation described below is necessary to define the memory address. Current Address Read Operation
Device address 8k to 64k Start
*1 *2 *3
Read data (n+1)
R
1010
ACK R/W
D7 D6 D5 D4 D3 D2 D1 D0
No ACK
Stop
Notes: 1. Don`t care bit for 16k. 2. Don`t care bits for 8k and 16k. 3. Don`t care bits for 4k, 8k and 16k.
Rev.5.00, Jan.14.2005, page 15 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Random Read: This is a read operation with defined read address. A random read requires a dummy write to set read address. The EEPROM receives a start condition, device address word(R/W=0) and memory address (8bit for 8kbit to 16kbit EEPROMs, 2 x 8-bit for 32kbit and 64kbit EEPROMs) sequentially. The EEPROM outputs acknowledgment "0" after receiving memory address then enters a current address read with receiving a start condition. The EEPROM outputs the read data of the address which was defined in the dummy write operation. After receiving acknowledgment "1"(no acknowledgment) and a following stop condition, the EEPROM stops the random read operation and returns to a standby state. Random Read Operation
Device address 8k to 16k Start 1010
@@@
W
Memory address (n)
a7 a6 a5 a4 a3 a2 a1 a0
Device address 1010 Start ACK
###
R
Read data (n)
D7 D6 D5 D4 D3 D2 D1 D0
ACK R/W
Dummy write
ACK No ACK Stop R/W
Currect address read
Device address 32k to 64k Start 1010
@@@
W
1st Memory address (n)
*1 *1 *1 a12 *2 a11 a10 a9 a8
2nd Memory address (n)
a7 a6 a5 a4 a3 a2 a1 a0
Device address 1010 Start ACK
###
R
Read data (n)
D7 D6 D5 D4 D3 D2 D1 D0
ACK R/W
Dummy write
ACK
R/W ACK
No ACK Stop
Currect address read
Notes: 1. Don`t care bits for 32k and 64k. 2. Don`t care bit for 32k. 3. 2nd device address code (#) should be same as 1st (@).
Rev.5.00, Jan.14.2005, page 16 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Sequential Read: Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives acknowledgment "0" after 8-bit read data, the read address is incremented and the next 8-bit read data are coming out. This operation can be continued as long as the EEPROM receives acknowledgment "0". The address will roll over and returns address zero if it reaches the last address of the last page. The sequential read can be continued after roll over. The sequential read is terminated if the EEPROM receives acknowledgment "1" (no acknowledgment) and a following stop condition. Sequential Read Operation
Device address 8k to 64k Start 1010
R
Read data (n)
D7 D6 D5 D4 D3 D2 D1 D0
Read data (n+1) Read data (n+2) Read data (n+m)
D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D5 D4 D3 D2 D1 D0
ACK R/W
ACK
ACK
ACK
No ACK Stop
Rev.5.00, Jan.14.2005, page 17 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Notes
Data Protection at VCC On/Off When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc) may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this EEPROM has a power on reset function. Be careful of the notices described below in order for the power on reset function to operate correctly. * SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition during VCC on/off may cause the trigger for the unintentional programming. * VCC should be turned off after the EEPROM is placed in a standby state. * VCC should be turned on from the ground level(VSS) in order for the EEPROM not to enter the unintentional programming mode. * VCC turn on speed should be longer than 10 s. Write/Erase Endurance and Data Retention Time The endurance is 105 cycles in case of page programming and 104 cycles in case of byte programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 104 cycles. Noise Suppression Time This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than 50 ns. Be careful not to allow noise of width more than 50 ns.
Rev.5.00, Jan.14.2005, page 18 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Package Dimensions
HN58X2408FPIE/HN58X2416FPIE/HN58X2432FPIE/HN58X2464FPIE (FP-8DBV)
Unit: mm
4.89 5.15 Max 5 8
1
4
3.90 1.73 Max
*0.20 0.05
6.02 0.18 1.06
0.69 Max
0 - 8
0.114 0.14 + 0.038 -
1.27 *0.40 0.05
0.289 0.60 + 0.194 -
0.10 0.25 M
Package Code JEDEC JEITA Mass (reference value) FP-8DBV -- -- 0.08 g
*Pd Plating
Rev.5.00, Jan.14.2005, page 19 of 20
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I HN58X2408TIE/HN58X2416TIE/HN58X2432TIE/HN58X2464TIE (TTP-8DAV)
Unit: mm
3.00 3.30 Max 8 5
1
4 0.65 1.00 0.13 M 6.40 0.20 0.805 Max 0 - 8 0.50 0.10
*0.20 0.05
4.40
*0.15 0.05
1.10 Max
0.10
0.07 +0.03 -0.04
*Pd Plating
Package Code JEDEC JEITA Mass (reference value)
TTP-8DAV -- -- 0.034 g
Rev.5.00, Jan.14.2005, page 20 of 20
Revision History HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I Data Sheet
Rev. Date Contents of Modification Page 1.0 2.0 Aug. 26, 1999 Nov. 26, 1999 1 Description Initial issue Addition of Note Features Addition of contents for "Shipping tape and reel" and "Temperature range" Change of package code: TTP-8D to TTP-8DA Features: Small size package, Shipping tape and reel Addition of SON 8-pin Ordering Information: Addition of HN58X2416NIR Package Dimensions: Addition of TNP-8DA Change format issued by Renesas Technology Corp. Ordering Information Addition of HN58X2408FPIE, HN58X2416FPIE, HN58X2432FPIE, HN58X2464FPIE, HN58X2408TIE, HN58X2416TIE, HN58X2432TIE, HN58X2464TIE, HN58X2416NIRE Package Dimensions FP-8DB to FP-8DB, FP-8DBV TTP-8DA to TTP-8DA, TTP-8DAV TNP-8DA to TNP-8DA, FP-8DAV
19 3.0 Aug. 9, 2002 1 2 20 4.00 Oct. 21, 2003 2
19
5.00
Jan.14.2005
2
Deletion of package : SON (TNP-8DA, TNP-8DAV) Ordering Information Deletion of HN58X2408FPI, HN58X2416FPI, HN58X2432FPI, HN58X2464FPI, HN58X2408TI, HN58X2416TI, HN58X2432TI, HN58X2464TI 19-20 Package Dimensions Deletion of FP-8DB, TTP-8DA
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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